Brewster windows feem ntau yog siv los ua polarizers hauv cov kab noj hniav laser. Thaum muab tso rau ntawm Brewster lub kaum sab xis (55 ° 32′ ntawm 633 nm), P-polarized feem ntawm lub teeb yuav dhau los ntawm lub qhov rais tsis muaj kev poob, thaum ib feem ntawm S-polarized feem yuav tshwm sim tawm ntawm lub qhov rais Brewster. Thaum siv nyob rau hauv lub laser kab noj hniav, lub qhov rais Brewster yeej tseem zoo li ib tug polarizer.
Brewster lub kaum sab xis muab los ntawm
tus (θB) = nt/ni
θByog Brewster lub kaum sab xis
niyog qhov Performance index ntawm refraction ntawm qhov teeb meem nruab nrab, uas yog 1.0003 rau huab cua
ntyog qhov Performance index ntawm refraction ntawm transmitting nruab nrab, uas yog 1.45701 rau fused silica ntawm 633 nm
Paralight Optics muaj Brewster windows yog tsim los ntawm N-BK7 (Qib A) lossis UV fused silica, uas pom zoo tsis muaj laser-induced fluorescence (raws li ntsuas ntawm 193 nm), ua rau nws yog qhov kev xaiv zoo tshaj plaws rau kev siv los ntawm UV mus rau ze IR. . Thov saib cov duab hauv qab no uas qhia txog kev cuam tshuam rau S- thiab P-polarization los ntawm UV fused silica ntawm 633 nm rau koj cov ntaub ntawv.
N-BK7 los yog UV Fused Silica Substrate
High Damage Threshold (Uncoated)
Zero Reflection poob rau P-Polarization, 20% Reflection rau S-Polarization
Zoo tagnrho rau Laser Cavities
Cov khoom siv substrate
N-BK7 (Qib A), UV fused silica
Hom
Pav ca lossis Wedged Laser Qhov rai (puag ncig, square, thiab lwm yam)
Loj
Kev cai tsim
Loj Tolerance
Hom: +0.00/-0.20mm | Precision: +0.00/-0.10mm
Thickness
Kev cai tsim
Thickness kam rau ua
Hom: +/- 0.20mm | Precision: +/- 0.10mm
Clear Aperture
> 90%
Parallelism
Precision: ≤10 arcsec | Siab Precision: ≤5 arcsec
Surface Quality (Scratch - Dig)
Precision: 60 - 40 | High Precision: 20-10
Nto Flatness @ 633 nm
Precision: ≤ λ/10 | High precision: ≤ λ/20
Transmitted Wavefront yuam kev
≤ λ/10 @ 632.8 nm
Chamfer
Tiv thaiv:0.5 hli x 45 °
Txheej
Uncoated
Wavelength Ranges
185-2100 nm
Laser Damage Threshold
> 20 J/cm2(20ns, 20Hz, @ 1064nm)